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| PH1214-3L Radar Pulsed Power Transistor 3W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Features * * * * * * * * * NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant M/A-COM Products Released, 30 May 07 Outline Drawing Absolute Maximum Ratings at 25C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 50 3.5 1.1 18.6 -65 to +200 200 Units V V A W C C Electrical Specifications: TC = 25 5C (Room Ambient ) Parameter Test Conditions Frequency Symbol BVCES ICES F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz RTH(JC) POUT GP Min 50 5.7 40 - Max 2.0 9.4 3.0 -9 2:1 1.5:1 Units V mA C/W W dB % dB - Collector-Emitter Breakdown Voltage IC = 20mA Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability VCE = 40V Vcc = 16.5V, Pin = 0.8W Vcc = 16.5V, Pin = 0.8W Vcc = 16.5V, Pin = 0.8W Vcc = 16.5V, Pin = 0.8W Vcc = 16.5V, Pin = 0.8W Vcc = 16.5V, Pin = 0.8W Vcc = 16.5V, Pin = 0.8W C RL VSWR-T VSWR-S 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. PH1214-3L Radar Pulsed Power Transistor 3W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty RF Test Fixture Impedance F (GHz) 1.2 1.3 1.4 M/A-COM Products Released, 30 May 07 ZIF () 9.4 - j7.8 8.8 - j7.3 8.1 - j7.2 ZOF () 8.5 + j6.9 9.2 + j4.9 5.3 + j4.7 Test Fixture Circuit Dimensions Test Fixture Assembly 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. |
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